IndiumV3, Russie, Analysis, bibRecord, 000B45

Solid-phase recrystallization of ZnS ceramics in phase transition region

Identifieur interne : 000B45 ( Russie/Analysis ); précédent : 000B44; suivant : 000B46

Solid-phase recrystallization of ZnS ceramics in phase transition region

Auteurs : RBID : Pascal:01-0000727

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Recristallisation, Méthode état solide, Traitement thermique, Pressage chaud, Monocristal, Semiconducteur II-VI, Zinc sulfure, Dopage cristal, Addition indium, Croissance grain, Effet impureté, Maclage, Céramique, 8110J, ZnS:In, S Zn.
Wicri :
- concept : Céramique.

English descriptors

KwdEn :
- Ceramics, Crystal doping, Experimental study, Grain growth, Growth from solid state, Heat treatments, Hot pressing, II-VI semiconductors, Impurity effect, Indium additions, Monocrystals, Recrystallization, Twinning, Zinc sulfides.

Abstract

ZnS monocrystals, grown by solid-phase recrystallization (SPR) during hot pressing in the phase transition (PT) region are shown to have been improved by the doping of In. SPR of undoped and Al- or Ga-doped ZnS has not been successful. X-ray Laue patterns of as-grown ZnS monocrystal showed cubic symmetry. Scanning electron microscope investigation of the boundary surface between the monocrystalline and the polycrystalline parts of the as-grown ZnS:In ceramic disk showed an abnormal growth of crystallites into a monocrystal. To explain the role of In, high-temperature electrical conductivity (HTEC) measurements were performed. The temperature region from 1000°C to 500°C on the HTEC isobar of ZnS:In monocrystal was "cleared" from step-like PT changes, obligatorily observed on isobars of undoped and Cu-doped ZnS isobars in this region.

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Pascal:01-0000727

Le document en format XML

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<author><name sortKey="Lott, K" uniqKey="Lott K">K. Lott</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn Technical University, Ehitajate tee 5</s1>
<s2>Tallinn 19086</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>Tallinn 19086</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anan Eva, G" uniqKey="Anan Eva G">G. Anan Eva</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>S.I. Vavilov State Optical Institute, All-Russia Scientific Center</s1>
<s2>193 171 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>193 171 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gorokhova, E" uniqKey="Gorokhova E">E. Gorokhova</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>S.I. Vavilov State Optical Institute, All-Russia Scientific Center</s1>
<s2>193 171 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>193 171 St. Petersburg</wicri:noRegion>
</affiliation>
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<idno type="stanalyst">PASCAL 01-0000727 INIST</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ceramics</term>
<term>Crystal doping</term>
<term>Experimental study</term>
<term>Grain growth</term>
<term>Growth from solid state</term>
<term>Heat treatments</term>
<term>Hot pressing</term>
<term>II-VI semiconductors</term>
<term>Impurity effect</term>
<term>Indium additions</term>
<term>Monocrystals</term>
<term>Recrystallization</term>
<term>Twinning</term>
<term>Zinc sulfides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Recristallisation</term>
<term>Méthode état solide</term>
<term>Traitement thermique</term>
<term>Pressage chaud</term>
<term>Monocristal</term>
<term>Semiconducteur II-VI</term>
<term>Zinc sulfure</term>
<term>Dopage cristal</term>
<term>Addition indium</term>
<term>Croissance grain</term>
<term>Effet impureté</term>
<term>Maclage</term>
<term>Céramique</term>
<term>8110J</term>
<term>ZnS:In</term>
<term>S Zn</term>
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<front><div type="abstract" xml:lang="en">ZnS monocrystals, grown by solid-phase recrystallization (SPR) during hot pressing in the phase transition (PT) region are shown to have been improved by the doping of In. SPR of undoped and Al- or Ga-doped ZnS has not been successful. X-ray Laue patterns of as-grown ZnS monocrystal showed cubic symmetry. Scanning electron microscope investigation of the boundary surface between the monocrystalline and the polycrystalline parts of the as-grown ZnS:In ceramic disk showed an abnormal growth of crystallites into a monocrystal. To explain the role of In, high-temperature electrical conductivity (HTEC) measurements were performed. The temperature region from 1000°C to 500°C on the HTEC isobar of ZnS:In monocrystal was "cleared" from step-like PT changes, obligatorily observed on isobars of undoped and Cu-doped ZnS isobars in this region.</div>
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<fC01 i1="01" l="ENG"><s0>ZnS monocrystals, grown by solid-phase recrystallization (SPR) during hot pressing in the phase transition (PT) region are shown to have been improved by the doping of In. SPR of undoped and Al- or Ga-doped ZnS has not been successful. X-ray Laue patterns of as-grown ZnS monocrystal showed cubic symmetry. Scanning electron microscope investigation of the boundary surface between the monocrystalline and the polycrystalline parts of the as-grown ZnS:In ceramic disk showed an abnormal growth of crystallites into a monocrystal. To explain the role of In, high-temperature electrical conductivity (HTEC) measurements were performed. The temperature region from 1000°C to 500°C on the HTEC isobar of ZnS:In monocrystal was "cleared" from step-like PT changes, obligatorily observed on isobars of undoped and Cu-doped ZnS isobars in this region.</s0>
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Solid-phase recrystallization of ZnS ceramics in phase transition region

Solid-phase recrystallization of ZnS ceramics in phase transition region

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri